中文摘要：

采用固相法分别制备了标准摩尔配比和铅过量10％的两种靶材，并利用脉冲激光沉积技术（PLD）在镧锶铝钽（LaSrAlTaO3，LSAT）单晶衬底上成功制备了锆钛酸铅（Pb（Zr0.3Ti0.7）O3，PZT）铁电薄膜，在550～750℃沉积温度范围内研究了PZT薄膜的生长取向和铅含量对薄膜生长取向的影响。利用X射线衍射（XRD）仪和原子力显微镜（AFM）表征了薄膜生长取向和表面形貌。XRD测量表明在标准摩尔配比情况下薄膜生长从550℃近似c轴取向逐渐过渡到750℃近似a轴取向，而在铅过量情况下薄膜生长取向无明显过渡性变化；AFM测量表明PZT薄膜在近似c轴和a轴生长情况下，表面均方根（RMS）粗糙度分别为16．9nm和13．7nm，而在混合生长无择优取向的情况下，薄膜表面均方根粗糙度达到68nm，这可能是两种取向竞争生长的结果。

英文摘要：

Pb （Zr0.3 Ti0.7 ）03 （PZT） ferroelectric thin films are grown by pulsed laser deposition （PLD） on LaSrAlTaO3 （LSAT） single crystal substrates from sintered targets of Pb （ Zr0.3 Ti0.7 ） 03 and Pb1. 1 （Zr0.3 Ti0.7 ） 03 （excessive 10%-Pb） with variable temperature of 550 ～ 750 ℃, respectively. The pattern observed by X-ray diffraction （XRD） indicates that the orientation of thin film growth transits from approximate c-axis at 550 ℃ to approximate maxis at 750 ℃ gradually in the no-excessive situation. But in the lead excessive situation, the thin film growth has no obvious transition change. Surface morphology measured by atomic force microscopy （AFM） demonstrates that the root-mean-square （RMS） roughnesses are 16.9 nm and 13.7 nm respectively when the PZT films are grown of approximate c-axis and a-axis. But in the mixed growth orientation, the RMS roughness was about 68 nm due to the competition growth.