中文摘要：

锌氧化物(ZnO ) 是有直接乐队差距和高激子绑定精力的一个复合半导体。唯一的性质，即，在紫外乐队的高有效的轻排放，使 ZnO 潜在地用于射出设备的短波长的光。然而，做的有效 p 类型为 ZnO 是极其难的。由于宽乐队差距和低原子价乐队精力，从施主和领受人的高电离精力的自我赔偿是妨碍免费的洞集中的改进的二个主要问题。在 ZnO 的本国的缺点能被划分成像施主、像领受人的。自我赔偿主要被发现了从空隙的锌发源，氧空缺联系了施主。当时像领受人的缺点，锌空缺，在 group-VA 要连接到复杂浅领受人的思维被做 ZnO。因此，本国的缺点的行为的理解对高度有效的 p 类型传导的实现批评。同时，一些新奇想法广泛地被建议了，象双领受人共同做一样，在 iso-valent 元素 alloyed ZnO 做的领受人，等等，并且为做的 p 类型打开了新方向。一些途径断然被判定了。在这篇文章，我们因此考察最近(2011 现在) 做的本国的缺点和 p 类型的研究进步全球性来临。我们希望提供全面概述并且描述在一个类似的区域为研究人员的参考在 ZnO 做的 p 类型的研究地位的一幅完全的图画。

英文摘要：

Zinc oxide（ZnO） is a compound semiconductor with a direct band gap and high exciton binding energy.The unique property,i.e.,high efficient light emission at ultraviolet band,makes ZnO potentially applied to the short-wavelength light emitting devices.However,efficient p-type doping is extremely hard for ZnO.Due to the wide band gap and low valence band energy,the self-compensation from donors and high ionization energy of acceptors are the two main problems hindering the enhancement of free hole concentration.Native defects in ZnO can be divided into donor-like and acceptorlike ones.The self-compensation has been found mainly to originate from zinc interstitial and oxygen vacancy related donors.While the acceptor-like defect,zinc vacancy,is thought to be linked to complex shallow acceptors in group-VA doped ZnO.Therefore,the understanding of the behaviors of the native defects is critical to the realization of high-efficient p-type conduction.Meanwhile,some novel ideas have been extensively proposed,like double-acceptor co-doping,acceptor doping in iso-valent element alloyed ZnO,etc.,and have opened new directions for p-type doping.Some of the approaches have been positively judged.In this article,we thus review the recent（2011-now） research progress of the native defects and p-type doping approaches globally.We hope to provide a comprehensive overview and describe a complete picture of the research status of the p-type doping in ZnO for the reference of the researchers in a similar area.