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金属有机源化学气相沉积法生长氧化锌薄膜中氢气的作用及其机理
  • ISSN号：1000-3290
  • 期刊名称：《物理学报》
  • 时间：0
  • 分类：O613.71[理学—无机化学;理学—化学]
  • 作者机构：[1]南京大学电子科学与工程学院,南京210046
  • 相关基金：国家重点基础研究发展计划（批准号：2011CB302003）; 国家自然科学基金（批准号：60990312,61025020,61274058）; 江苏省自然科学基金（批准号：BK2011437）; 江苏高校优势学科建设工程资助的课题
作者： 朱顺明[1], 顾然[1], 黄时敏[1], 姚峥嵘[1], 张阳[1], 陈斌[1], 毛昊源, 顾书林[1], 叶建东[1], 郑有炓[1]
关键词： 金属有机源化学气相沉积外延生长, 氧化锌, 不同氧源, 氢气影响, metal-organic chemical vapor deposition epitaxial growth, zinc oxide, different O source,hydrogen
中文摘要：

本文重点探讨了金属有机源化学气相沉积生长ZnO薄膜中氢气的作用与机理.研究表明氢气对ZnO薄膜的结构与性质具有重要的影响.当采用叔丁醇为氧源时,氢气对ZnO薄膜的晶体质量,表面结构和发光性质主要产生负面的影响,同时发现氢气的加入有助于抑制碳的沾污.而当采用笑气为氧源时,测量显示表面变光滑,晶体质量得到提高,发光强度也得到提升.氢气在笑气作为氧源生长ZnO的过程中基本起到了正面的作用.论文最后从氢气降低生长表面能量,提高表面原子迁移能力但存在表面腐蚀作用的方向以上结果给予了较好的解释.研究显示MOCVD生长高质量ZnO薄膜中氢气的优化具有特别重要的意义.

英文摘要：

This paper focuses on the influence and mechanism of H2 in the eptaxial growth of ZnO using metal-organic chemical vapor deposition method. Studies show that hydrogen has a significant influence on the structure and properties of ZnO films. Hydrogen produces a mainly negative impact on crystal quality, surface structure, and optical properties of ZnO films when tert-butanol （t-BuOH） is used as the O sources. Raman scattering shows that hydrogen has a very good effect on the suppression of carbon contamination. When nitrous oxide is used as the O sources, the surface of ZnO films becomes smooth, and the crystal quality and optical property are improved. It is shown that hydrogen can play a positive role when N2O is used as O source. In this paper we highly estimate hydrogen＇s ability of reducing the surface growth energy, improving the migration of the surface atoms and the corrosion effect on the surface. Studies show that the optimization of hydrogen has a significant effect during the epitaxial growth of ZnO using the MOCVD method.

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期刊信息
  • 《物理学报》
  • 北大核心期刊（2011版）
  • 主管单位:中国科学院
  • 主办单位:中国物理学会 中国科学院物理研究所
  • 主编：欧阳钟灿
  • 地址：北京603信箱(中国科学院物理研究所)
  • 邮编：100190
  • 邮箱：apsoffice@iphy.ac.cn
  • 电话：010-82649026
  • 国际标准刊号：ISSN：1000-3290
  • 国内统一刊号：ISSN：11-1958/O4
  • 邮发代号:2-425
  • 获奖情况:
  • 1999年首届国家期刊奖,2000年中科院优秀期刊特等奖,2001年科技期刊最高方阵队双高期刊居中国期刊第12位
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  • 被引量:49876