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ZnMgO/ZnO异质结构中二维电子气的研究
  • ISSN号：1000-3290
  • 期刊名称：Acta Physica Sinica
  • 时间：2013.8.8
  • 页码：16-21
  • 分类：TN32[电子电信—物理电子学]
  • 作者机构：[1]南京大学微结构国家实验室和电子科学与工程学院,南京210093
  • 相关基金：国家重点基础研究发展计划（批准号：2011302003）; 国家自然科学基金（批准号：60990312,61025020,61274058）; 江苏省自然科学基金（批准号：BK2011437）; 江苏高校优势学科建设工程资助的课题
  • 相关项目：高居里温度自旋量子结构与器件
作者： 张阳|顾书林|叶建东|黄时敏|顾然|陈斌|朱顺明|郑有炓|
关键词： 氧化锌, 二维电子气, 异质结构, 理论计算, ZnO, 2DEG, heterostructure, theoretical calculation
中文摘要：

论文根据ZnMgO/ZnO异质结构二维电子气的能带结构及相关理论模型,采用一维Poisson-Schrodinger方程的自洽求解,模拟计算了ZnMgO/ZnO异质结构中二维电子气的分布及其对ZnMgO势垒层厚度及Mg组分的依赖关系.研究发现该异质结构中ZnMgO势垒层厚度存在一最小临界值：当垒层厚度小于该临界值时,二维电子气消失,当垒层厚度大于该临界值时,其二维电子气密度随着该垒层厚度的增加而增大;同时研究发现ZnMgO势垒层中Mg组分的增加将显著增强其二维电子气的行为,导致二维电子气密度的明显增大;论文对模拟计算获得的结果与相关文献报道的实验结果进行了比较,并从极化效应和能带结构的角度进行了分析和讨论,给出了合理的解释.

英文摘要：

Based on the band structure and related theoretical model of two-dimensional electron gas （2DEG）, the dependence of the distribution of 2DEG on the thickness of ZnMgO barrier and related Mg content in ZnMgO/ZnO heterostructures has been computed by self-consistently solving the coupled Schrodinger and Poisson equations. Computation results reveal a critical thickness of the ZnMgO barrier for 2DEG formation, with no 2DEG occurring as the barrier thickness is below the critical value. When the thickness is above the value, the density of the 2DEG increases linearly with the thickness of ZnMgO barrier and saturates finally. The density of the 2DEG also shows a strong dependence on the Mg content in the ZnMgO barrier, with an obvious increase obtained as the Mg content enhances. At the same time, we compare the computed results with experimental data reported in the references with a certain degree of consistence obtained. Explanations and discussions of the above comparison have been presented in the study from the views of polarization effects and band structure.

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期刊信息
  • 《物理学报》
  • 北大核心期刊（2011版）
  • 主管单位:中国科学院
  • 主办单位:中国物理学会 中国科学院物理研究所
  • 主编：欧阳钟灿
  • 地址：北京603信箱(中国科学院物理研究所)
  • 邮编：100190
  • 邮箱：apsoffice@iphy.ac.cn
  • 电话：010-82649026
  • 国际标准刊号：ISSN：1000-3290
  • 国内统一刊号：ISSN：11-1958/O4
  • 邮发代号:2-425
  • 获奖情况:
  • 1999年首届国家期刊奖,2000年中科院优秀期刊特等奖,2001年科技期刊最高方阵队双高期刊居中国期刊第12位
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  • 被引量:49876