采用离子束溅射沉积技术,在熔融石英基底上制备了SiO2薄膜,研究了热处理对离子束溅射SiO2薄膜结构特性的影响。热处理温度对表面粗糙度影响较大,低温热处理可降低表面粗糙度,高温热处理则增大表面粗糙度,选择合适的热处理温度,可以使表面粗糙度几乎不变。采用X射线衍射仪(XRD)物相分析方法,分析了热处理对离子束溅射SiO2薄膜的无定形结构特性的影响,当退火温度为550℃,离子束溅射SiO2薄膜的短程有序范围最大、最近邻原子平均距离最小,与熔融石英基底很接近,结构稳定。实验结果表明,采用合适的热处理温度,能大大改善离子束溅射SiO2薄膜的结构特性。
SiO 2 films were deposited on fuse d silica substrates by ion beam sputtering(IBS) technology, and the effects of thermal treatment on structural characteristic were researched.The effects of annealing temperature on surface roughness of IBS-SiO 2 films were very large,low annealing temperature could reduce the surface roughness,but high annealing temperature could increase the surface roughness,the proper annealing temperature had almost no impact on surface roughness.Amorphous structures of IBSSiO 2 films were researched by XRD technology.When the annealing temperature was 550 ℃,the largest short range order and the shortest average distance were obtained,the results were the same as the fused silica substrate,and the structure was stable.Expermental results show that structural characteristic of IBS-SiO 2 films can be improved by the proper thermal treatment.