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外延法生长金刚石薄膜场发射特性研究

ISSN号：1004-4213
期刊名称：《光子学报》
时间：0
分类：TN383.1[电子电信—物理电子学]
作者机构：[1]沈阳师范大学物理科学与技术学院,沈阳110034
相关基金：国家自然科学基金（50072029和50572101）资助

关键词：场发射, 金刚石, 外延法, 非晶碳, Field emission , Diamond films , Epitaxy method , Amorphous carbon

中文摘要：

研究了外延法生长金刚石薄膜的场发射特性．金刚石薄膜用热丝CVD法生长，甲烷与氢气比例为2．5％，生长于事先电泳沉积在硅衬底的金刚石微晶上．实验数据的计算结果表明：金刚石薄膜的阂值电压为1．8V/μm，有效功函数降低为纯金刚石颗粒的0．11倍．通过SEM、XRD和Raman等手段表征了金刚石薄膜的结构，并对其场发射机制作出理论分析．

英文摘要：

The diamond films were propared with CVD and its properties of field emission were studied. SEM,XRD, Raman spectroscopy were employed in order to determine samples surface morphology,crystal orientation,and quality of the films. Results,show that,at the pressure of 10 4 Pa,emission can be obtained at field as low as 1.8 V/μm. According to experimental results, theoretical explanation to electron behavior was given.

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