中文摘要：

以碳化硅和铝粉为原料，均匀混合后在不同气氛中于2000℃下保温0．5h制得粉体。用X射线衍射分析（XRD）和扫描电子显微镜（SEM）对其进行表征。同时在8．2～12．4GHz频率范围内测试其介电性能。结果表明：在N2气氛中，当铝的含量较少时，未出现AIN物相，当铝含量超过10at%时，AIN相开始出现，并且AIN的含量随着铝含量的增加而增加。掺杂铝样品与未掺杂铝样品相比，其介电常数实部ε′和介电损耗tanδ皆降低，且随着铝含量的增加而逐步降低，主要是因为AIN具有较低的介电常数实部和损耗。

英文摘要：

The silicon carbide and aluminum powders are used as starting materials and mixed uniformly, and the mixtures are heat treated at 2000℃ in different atmospheres for 0. 5h. The powders as-prepared are characterized by XRD and SEM. The dielectric constants of the powders are measured in the frequency range of 8. 2- 12, 4GHz. The results show that there does not exist the AIN phase when the concentration of aluminum is low in the N2 atmosphere. However, the AIN phase appears when the concentration of aluminum is greater than 10at%. The real part of dielectric constant of aluminum undoped SiC powder is higher than that of aluminum-doped powder. The dielectric constant and loss of SiC-AIN solid solution decrease with the AI concentration due to the low dielectric constant and loss of AIN.