中文摘要：

考虑厚胶曝光过程中非线性因素的影响及其显影特点，用一套随抗蚀剂厚度发生变化的曝光参数改进的Dill曝光模型，仿真厚层抗蚀刺光刻过程，并比较新曝光模型与原有Dill模型模拟的结果差异。模拟显示，用新曝光模型获得的厚抗蚀剂显影轮廓与实验结果吻合较好；并对厚胶光刻成像机理进行了讨论。通过分析正性厚层抗蚀刑AZ4562的显影轮廓，给出其显影线宽及边墙陡度随显影时间的变化规律，提出应以获得最大边墙陡度作为优化显影时间的思想。对厚度5pm和15pm的抗蚀剂，经计算，可获得良好的抗蚀剂浮雕轮廓的优化显影时间分别为98s和208s。

英文摘要：

In consideration of many nonlinear factors in the exposure process and development features, we adopt a set of exposure parameters varying with resist thickness to improve Dill exposure model. Simulate the process of thick resist lithography and compare the simulation results of new exposure model with that of former Dill model. The simulation results show that the development profile of thick resist based on new exposure model is consistent with the experimental result, and the imaging mechanism of thick resist lithography is discussed. By analysis of development profile of positive thick resist AZ4562, we give the variation rules of line width and sidewall angle with development time, and then present the thinking of regarding the time of maximal sidewall angle emerging as optimizing development time. For 5μm and 15μm resist respectively, the development times of getting optimal thick resist profile are 98s and 208s.