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中文摘要：
针对厚胶曝光参数随不同光刻胶厚度及工艺条件变化的特点，在原有Dill曝光模型基础上，建立了适合于描述厚胶曝光过程的增强Dill模型。并将统计分析的趋势面法引入到厚胶曝光参数变化规律的研究中，给出了厚胶AZ4562曝光参数随胶厚及工艺条件的变化趋势，为开展厚胶光刻实验研究和曝光过程模拟提供指导性依据。
英文摘要：
In this paper, aiming at the characteristics of exposure parameters during thick photoresist lithography, we present an enhanced Dill exposure model suitable for describing the thick photoresist exposure. And the statistical theroy trend surface analysis is introduced so that the regularity of the exposure parameters varying with the thickness of the thick photoresist and technique conditions can be discovered. At last, the trend analysis of exposure parameters with the thickness of the photoresist AZ4562 is given, which provides an important basis for the experiment or simulation research of the thick photoresist lithography.
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Theoretical Analysis of Interference Nanolithography of Surface Plasmon Polaritons without a Match L
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