位置：成果数据库 > 期刊 > 期刊详情页
InAs/GaAs quantum dots grown on different GaAs substrates with graded InxGa1-xAs strain-reducing lay
  • 期刊名称：Front. Optoelectron. China
  • 时间：0
  • 页码：241-241
  • 语言：英文
  • 相关项目：基于选择共振腔的单片集成白光LED芯片新方案研究
作者： Lirong Huang|Shuping Fei |Zhongwei Shi|
同期刊论文项目
基于选择共振腔的单片集成白光LED芯片新方案研究
期刊论文 19 会议论文 10 专利 6
同项目期刊论文
Enhancement of gain recovery rate and cross-gain modulation bandwidth using two-electrode quantum-do
Pattern Effect Reduction in All-optical Wavelength Conversion Using Two-electrode Semiconductor Opti
不同盖层对InAs/GaAs量子点结构和光学性质的影响
Performance study of InAs/GaAs quantum dot covered by graded InxGa1-xAs layer
1.3μm InAs/GaAs quantum dots with broad emission spectra.
Circuit modeling of quantum dot semiconductor optical amplifier
Theoretical analysis of enhanced light output from GaN light emitting diode with embedded photonic c
Effect of thermal annealing on the structure and magnetism of Fe-doped ZnO nanocrystals synthesized
超辐射发光二极管数值仿真模型
Structural and optical properties of self-assembled InAs quantum dot molecules on GaAs substrates.
Wavelength Red-Shift of Long Wavelength InGaN/GaN Multi-Quantum Well by Using an InGaN Underlying La
Comparative Study on MOCVD Growth of a-Plane GaN Films on r-Plane Sapphire Substrates Using GaN, AlG
In situ growth monitoring of AlGaN/GaN distributed Bragg reflectors at 530nm using a 633nm laser
Luminescence properties of blue and green dual wavelength InGaN/GaN multi-quantum well light-emittin
Monolithic white LED based on AlxGa1_x N/InyGa1_yN DBR resonant-cavity
An integrated circuit subsystem of quantum dot semiconductor optical amplifier coupled with electro-
In situ growth monitoring of AlGaN/GaN distributed Bragg reflectors at 530 nm using a 633 nm laser
Monolithic white LED based on AlxGa1-x N/InyGa1-yN DBR resonant-cavity