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Comparative Study on MOCVD Growth of a-Plane GaN Films on r-Plane Sapphire Substrates Using GaN, AlG
  • 期刊名称：Journal of Electron Materials
  • 时间：0
  • 页码：1938-1943
  • 语言：英文
  • 相关项目：基于选择共振腔的单片集成白光LED芯片新方案研究
作者： Y.Q. SUN|Y.K. XIONG|Z.H. WU|L.Z. TONG|J.N. DAI|C.Q. CHEN|Q. ZHANG|Q.H. HE|F.A. PONCE|C.H. YU|X.Y. HAN|
同期刊论文项目
基于选择共振腔的单片集成白光LED芯片新方案研究
期刊论文 19 会议论文 10 专利 6
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