中文摘要：

在高阻硅衬底上采用光刻、直流磁控溅射、反应离子刻蚀（RIE）、等离子体增强化学气相沉积法（PECVD）等方法研究制备了高质量的Nb/Al-AlOx/Nb超导隧道结。在4.2K下,测量了直径8μm的圆形结样品,得到临界电流密度约为1.6kA/cm2,漏电流约为50μA。制结工艺流程的重复性较好。

英文摘要：

We fabricated Nb/A1- AlOx/Nb superconducting tunnel junctions（STJs） on high resistance silicon substrate, by using several processes including photolithography, DC magnetron sputtering, reactive ion etching （RIE） and plasma enhanced chemical vapor deposition methods（PECVD）. At 4.2K, we measured the I - V curve of the junction sample with the diameter of 8μm, shown the Josephson critical current density of 1.6kA/cm2, and the leakage current of 50μA. The repeatability of fabrication process is good.