采用液相电化学方法在硅基底上制备了石墨烯掺杂的类金刚石碳复合薄膜,探讨了电化学沉积复合薄膜的机理。利用扫描电子显微镜(SEM)、拉曼光谱(Raman)、透射电子显微镜(TEM)和傅里叶变换红外(FTIR)光谱技术对薄膜表面形貌和微观结构进行了分析表征。结果表明,石墨烯片均匀分散沉积在含氢类金刚石碳(a-C:H)基体中,沉积的石墨烯/类金刚石(G/a-C:H)复合薄膜表面相对均匀平整。场发射测试显示石墨烯掺杂使开启电场从4.7 V·μm^(-1)增加至5.8 V·μm^(-1),场发射电流密度从384μA·cm^(-2)显著增加至876μA·cm^(-2)。
Graphene-doped diamond-like carbon(G/a-C:H) nanocomposite films were fabricated using a liquidphase electrochemical method. A nanocomposite film growth mechanism is proposed and discussed. The deposited films were characterized using scanning electron microscopy(SEM), Raman spectroscopy,transmission electron microscopy(TEM), and Fourier transform infrared(FTIR) spectroscopy. The results showed that graphene sheets were homogeneously dispersed in a hydrogenated amorphous carbon(a-C:H)matrix. The deposited G/a-C:H film surface was uniform and smooth. Field emission experiments showed that graphene doping slightly increased the turn-on field, from 4.7 to 5.8 V·μm~(-1), and significantly improved the current density, from 384 to 876 μA·cm~(-2).