中文摘要：

以高纯Sn丝为蒸发源,采用真空热蒸发法在石英衬底上沉积了厚度为205nm的金属Sn薄膜.随后,在高纯氧氛围中于200-500℃条件下进行氧化处理.利用X线衍射仪、拉曼光谱仪、分光光度计和数字源表测量了不同氧化温度下样品的结构、光学、电学特性.结构测量表明,不同氧化温度会产生不同结晶状态的氧化产物,提高氧化温度可得到单一、稳定的四方晶系SnO2.光学测量结果证实,随氧化温度的升高,薄膜样品的光学带隙增大,电流-电压测试表明薄膜电阻率随氧化温度的升高而降低.

英文摘要：

Sn thin films with thickness of 205 nm were deposited on quartz substrates surface by vacuum thermal evaporation method using high purity Sn wire as evaporation source.Then,the films were un- der oxidation treatment in the temperature range of 200- 500 ℃ in high purity oxygen atmosphere. The films were characterized using X-ray diffraction（XRD）, Raman spectrometer, spectrophotometer and source meter for their structural, optical and electrical properties respectively. The measure for structural studies reveal that SnO2 of tetragonal system with a single crystal orientation is obtained under the high temperature.The optical measurement shows that thin film optical band gap in creases with oxidation temperature rises.The current - voltage characteristics show that electrical conductivity decrease with increasing oxidation treatment.