中文摘要：

为满足电子系统对放大器的带宽性能要求，基于2μm砷化镓（GaAs）异质结双极晶体管（HBT）工艺设计了一种新的分布式放大器。设计采用了输入电容耦合技术和L型传输线结构，有效提升了放大器的频率性能。测试结果显示，该放大器的3dB带宽达到14GHz，在1．2GHz～10．5GHz频率范围内增益为6．6dB，带内增益平坦度为±0．5dB，输入回波损耗小于-14dB，输出回波损耗小于-8．8dB，表现出了高增益和大带宽的特性。

英文摘要：

distributed amplifier for advanced electronic systems was designed based on the 2-1μm GaAs Hetero- junction Bipolar Transistor （HBT） process. The input capacitance coupling technology and an L type transmission line structure were applied to the design to increase the frequency performance of the amplifier. The measurement results showed that the amplifier provided a 3dB bandwidth as high as 14GHz. The amplifier gave a 6.6dB gain from 1.2GHz to 10.5GHz with an excellent gain flatness of ±0.5dBo The input return loss was lower than - 14dB while the output return loss was lower than - 8.8dB, exhibiting the high gain, great bandwidth characteristics.