本文用分数维方法研究Alx Ga1-x As衬底上GaAs薄膜中的极化子特性,提出了确定GaAs薄膜的有效量子限制长度的一个新方法,解决了原来方法中在衬底势垒处有效量子限制长度发散的困难,得到了Alx Ga1-x As衬底上GaAs薄膜中的极化子的维数和结合能。
The polaron confined in a GaAs film deposited on Alx Ga1-x As substrate are investigated in the framework of the fractional-dimensional space approach. We propose a new approach to define the effective length of quantum confinement. Limitations of the definition of original effective well width are discussed. The dimension and the binding energy of a polaron confined in a GaAs film deposited on Al0.3Ga0.7As substrate are obtained and investigated.