中文摘要：

介绍了一种用电子束蒸发Schott 8329玻璃薄膜作为中间层,实现硅-硅以及硅-SOI阳极键合的方法。调整蒸发时的工艺并且450℃退火,沉积了粗糙度9.62 nm、初始应力139 MPa、喷点较少的薄膜,从而获得了>95%的键合面积。键合电压20 V,温度300℃~500℃下硅-硅的键合强度可达1.47 J/m2,同时分析了键合电流特性。400℃,40V下键合了Si和SIMOXSOI硅片,用TMAH溶液进行基底减薄,获得了厚介质层薄顶层硅结构,这为一些MEMS器件的制作奠定了基础。

英文摘要：

A novel technique has been successfully developed to bond silicon to silicon or to silicon-on-insulator(SOI) wafers with Schott 8329 glass films,deposited by e-beam evaporation,as an intermediate layer.The influence of the bonding conditions and the intermediate glass films growth on bonding areas and on the bonding adhesion was studied.The droplet-free films,with a surface roughness of 9.62 nm and a residual stress of 139 MPa and a bonding yield higher than 95%,were grown under optimized conditions after a...