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Theoretical study of the effects of InAs/GaAs quantum dot layer’s position in i-region on curr
  • 期刊名称：Appl. Phys. Lett
  • 时间：2012
  • 页码：081118-081121
  • 相关项目：半导体集成光电子器件及其基础研究
作者： Yong-Xian Gu, Xiao-Guang Yang, Hai-Ming Ji, Pen|
同期刊论文项目
半导体集成光电子器件及其基础研究
期刊论文 121 会议论文 10 专利 13 著作 4
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