中文摘要：

本文系统分析了化学刻蚀过程中反应生成的扩散和物质传输规律,得到了刻蚀工艺参数如时间、温度、HF酸浓度、辅助试剂对刻蚀速率的影响规律。结果表明：在刻蚀时间较短时刻蚀速率基本恒定,随着时间的增加刻蚀速率呈现逐渐下降的趋势。温度的升高改变了反应物质的活化能和溶液的传输特性,促使刻蚀速率加快。随HF酸浓度的增大刻蚀速率有很大的提高,但反应过快不宜控制刻蚀进程,而采用缓冲氧化物刻蚀剂有利于提高熔石英元件化学刻蚀速率。

英文摘要：

In this paper, the diffusion and propagation law of the reaction in the chemical etching process were systematically analyzed, and the influence of etching process parameters such as time, temperature, HF acid concentration and auxiliary reagent on the etching rate were obtained. The etching rate was constant when the etching time was relatively short, and the etching rate decreased with the increase of time. The etching rate accelerated because the increase of temperature changed the activation energy of the reaction material and the transfer characteristics of the solution. With the increase of HF acid concentration, the etching rate was greatly improved, but it was not suitable to control the etching process when the reaction was too fast. And the use of buffer oxide etching agent was beneficial to improve the chemical etching rate of fused silica elements.