Characteristics of vertical double-gate dual-strained-channel MOSFETs
ISSN号:1674-4926
期刊名称:《半导体学报:英文版》
分类:TN386.1[电子电信—物理电子学] TN305[电子电信—物理电子学]
作者机构:[1]Department of Electronic Engineering, Xi 'an University of Technology, Xi 'an 710048, China
相关基金:Project supported by the (Xi'an) Innovation Foundation for Applied Materials of USA (No. XA-AM-2008070 and the Education Bureau of Shannxi Province (No. 08JK384).