作为一种新型溶液晶体生长方式,"三维运动生长法"能够快速生长高质量大尺寸的KDP晶体。为了了解KDP晶体在三维运动生长过程中晶体内部的应力状态,本文采用有限元法对三维运动下KDP晶体生长过程中的应力分布进行了计算。结果表明,掣晶杆顶端附近以及晶面和掣晶杆交接处存在明显的应力集中,主应力较大,是晶体生长过程中的易开裂点。增加掣晶杆直径,使用圆头掣晶杆和降低三维运动过程中的加速度能够降低晶体内部的最大主应力,减小晶体在生长过程中开裂的机率。
As a new solution crystal growth method, " three-dimension motion crystal growth method" has obvious advantages in both crystal quality and growth rate when growing large size KDP crystal. The stresses of KDP in the process of crystal growth were calculated by finite element method in order to obtain the stress state. The results show that the crystal principle stresses in the region near the apex of seed rod and in the cross region of crystal surface and seed rod are larger than stresses in anywhere else due to the stress concentration. Both of the two regions have high probabilities to crack during crystal growth. Maximum principle stress in crystal can be reduced by increasing seed rod diameter,using seed rod with a spherical apex or decreasing the acceleration value during crystal growth,which means a much smaller risk of crystal crack.