中文摘要：

通过对L-丙氨酸掺杂下ZTS（100）、（010）及（001）面法向生长速度的研究发现,各晶面法向生长速度随过饱和度的增加而线性增加;随掺杂浓度的增加,（100）面的法向生长速度先增大后减小,而（010）及（001）面的法向生长速度先减小,接着增大,然后又减小。分析表明（100）面以位错生长机制为主,（010）及（001）面以连续生长机制为主。利用光学显微镜在侵蚀后的（100）面观察到矩形位错蚀坑,蚀坑密度为33～308 mm-2;掺杂浓度为1%（摩尔分数）时,蚀坑密度最小。

英文摘要：

Via studying the normal growth rates of the（ 100）,（ 010） and（ 001） faces of ZTS crystal under different doping concentrations of L-alanine,we found that the normal growth rate of ZTS crystal increased linearly with the increase of supersaturation. With increase of doping concentration,L-alanine addition led to an initial increase and then a decrease of the normal growth rate of the（ 100） face. However,L-alanine doping led to a decrease first,followed by an increase and then a decrease again of the normal growth rates of the（ 010） and（ 001） faces. The growth of（ 100） face was featured mainly by the dislocation mechanism,and the growth of（ 010） and（ 001） faces are,however,featured by the continuous growth model as supported by the experimental results. Well-defined dislocation pits of rectangular shape were observed on the chemical etching（ 100） face of ZTS crystal by using optical microscopy. The dislocation density of（ 100） face was 33-308 mm-2. Study results indicated that dislocation density could be minimized when L-alanine concentration was set at 1mol%.