开展了高阻半导体硅深小孔放电加工试验研究,通过在工件硅上附加机械振动,研究振幅和频率对其放电穿孔加工效率的影响规律。试验表明:随着振幅的增大,加工效率先增加后降低;随着频率的增加,加工效率逐渐提高。原因在于随着振幅的增大,极间冷却排屑效果改善,短路率下降,火花放电机率升高;但当振幅大于放电间隙时,硅与工具电极会产生直接撞击,火花放电机率下降。随着振动频率的增大,脉冲利用率升高。最后,对电阻率为2.1Ω.cm的P型半导体硅进行放电穿孔加工,实现了直径为0.3mm、深径比为25.3的深小孔的加工,并加工了边长为0.9mm的正三角形小孔。
Micro-hole EDM technology on high resistance semiconductor silicon was carried out herein.Through attaching mechanical vibration to a piece of silicon,the efficiency of perforation under the conditions of different amplitudes and frequencies was studied.Experiments show that with the larger amplitude,EDM efficiency first increases and then reduces;as the frequency becomes larger,the efficiency of perforation improves gradually.The reasons are that:the larger amplitude,the better the chip removal,the lower the short-circuit rate,the higher the discharge rate.However,when the amplitude is greater than the discharge gap,the silicon hits with the tool electrode directly,the discharge rate declines.On the other hand,the larger the frequency,the higher the pulse utilization rate.At last,a hole whose diameter is 0.3mm and the ratio of depth to diameter is 25.3 and a equilateral triangle hole whose side is 0.9mm were achieved on P-type silicon whose resistivity is 2.1Ω · cm.