中文摘要：

采用溅射法制备的非晶结构HfO_x薄膜,其平均透射率超过80%,禁带宽度约为5.73 eV。以此制备的ITO/HfO_x/Ti阻变存储器,表现出稳定且可重复的双极性电阻开关行为,同时,常温下具有卓越的数据保持特性及良好的耐擦写特性。研究发现,ITO/HfO_x/Ti阻变存储器的低阻态电荷输运机制为欧姆传导机制,而高阻态下则以空间电荷限制电流机制（SCLC）为主导。

英文摘要：

Amorphous HfO_x thin films with transmittance of over 8 0 % and optical band gap of 5. 7 3 eV were sputter-deposited in this work. The resistive random access memory with structure of ITO / HfO_x/ Ti was then fabricated,which exhibits revisable bipolar resistive switching with good data retention and endurance. The conduction of the low resistance state is Ohmic behavior,while the conduction in the high resistance state is dominated by spacecharge-limited mechanism.