讨论了Si/SiC半导体纳米复合发光薄膜退火工艺的控制。半导体纳米复合发光薄膜的光致发光性能,直接受到退火工艺的影响和制约,退火后薄膜的组态及其元素的变化等因素,可能使得薄膜变成并不是所期望得到的结果。该文采用了在不同气氛、不同退火介质、不同放置方法等防氧化方法下进行退火,提高了退火可信度,使纳米复合薄膜的结果更可靠。
This paper discussed the preparation and annealing technique of Si/SiC nano- composite thin films. The photoluminescence (PL) results are affected and confined by the annealing technique directly, The component and surface status of films of sputtered films after anneal would not be expected. By introducing several different annealing techniques, we clarify the best way of annealing to ensure the real property of nano- composite films.