中文摘要：

介绍了4H-SiC材料用于高温、低电平紫外光电检测的优点，回顾总结了近年来4H—SiC基紫外光电探测器的研究进展，分析了改善4H—SiC基紫外光电探测器性能参数如降低暗电流、提高光电响应度等可采用的各种技术手段，探讨了4H—SiC基紫外光电探测器的发展趋势。

英文摘要：

Advances in 4H silicon carbide （4H-SiC） as a potential material for low-level ultraviolet （UV） radiation detection application at high=temperature, radiation hardened conditions are introduced. The latest progress in development of and the current state-of-art of different types of 4H-SiC-based UV photodetectors are reviewed. The approaches to improve the performances of the 4H-SiC-based photodetectors such as reducing the dark current and enhancing the photo responsivity are presented. The outlook for the development of 4H-SiC-based UV photodetectors are discussed.