欢迎您！东篱公司
退出
-
申报数据库
-
立项数据库
-
成果数据库
-
项目获奖数据库
中文摘要：
通过扫描电镜、扫描探针显微镜和电子背散射衍射仪对改进的Chen法腐蚀液在Hg3In2Te6（111）晶片上形成的腐蚀坑进行了研究。实验发现,腐蚀坑形貌主要有线形、梭形、枣形3种,且后两者的沟槽在（111）面的投影只有3种取向,并互成120°夹角。进一步分析的结果表明,上述蚀坑的形成可由螺位错双交滑移的模型加以解释。
英文摘要：
Etch pits on the（111）face of Hg3In2Te6sample etched by modified Chen solution are investigated by means of scanning electron microscopy,scanning probe microscopy and electron backscatter diffraction instrument.The experimental results show that there are three basic etch pits：line shape,shuttle shape and date shape.In addition,black lines which are（111）plane projections of grooves in the latter two etch pits are oriented in three directions which are at 120°angles to one another.Further analyses show that the formation process of the three etch pits can be explained by the model of double cross-slip of screw dislocation.
同期刊论文项目
同项目期刊论文
期刊信息
位置：