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Distribution of deep-level traps at atomic-layer-deposited Al2O3/n-GaN interface
  • ISSN号：0038-1101
  • 期刊名称：Solid-state Electronics
  • 时间：0
  • 页码：56-59
  • 相关项目：III族氮化物功率半导体器件与材料研究
作者： Yan, Dawei|Lu, Hai|Chen, Dunjun|Zhang, Rong|Zheng, Youdou|Qian, Xu|Li, Aidong|
同期刊论文项目
III族氮化物功率半导体器件与材料研究
期刊论文 46
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