基于Morlet连续小波理论和声表面波器件工作机理,提出了一种用声表面波器件实现Morlet连续小波器件的研究方案。该方案根据Morlet连续小波的包络函数对输入换能器进行加权,利用声表面波器件衬底材料的压电效应,实现了对输入信号的Morlet小波变换。并以128。YX-LiNbO,晶体作为压电衬底材料,设计和制作了一个尺度因子为一8的声表面波型Morlet小波器件,用芯片测试系统对所制作的器件内部结构进行了观测,用射频网络分析仪对器件的频率响应特性进行测量。实验和分析结果表明,尽管由于工艺及测量原因,器件理论插入损耗与实际插入损耗之间存在0.621dB的误差,但在频率特性曲线形状及变化趋势等方面,实验与理论特性曲线具有较好的一致性,并且实际频率响应曲线的旁瓣抑制效果好于理论曲线。
On the basis of the Morlet continuous wavelet transform theory and surface acoustic wave (SAW) device working principles, the research scheme for the realization of Morlet conti- nuous wavelet devices with the SAW device was proposed. The input transducers were weighted by the envelope function of the Morlet continuous wavelet with the research scheme, and the Morlet wavelet transformation of the input signal was realized with the piezoelectric effect of the substrate material for the SAW device. With 128~ YX-LiNbO3 crystals as piezoelectric substrate materials, the Morlet wavelet device based on the SAW device with the scale factor of - 8 was designed and fabricated. The internal structure of the designed device was observed by the chip testing system, and the frequency response characteristic was measured by the RF network analy- zer. The experiment and analysis results show that there is an error of 0. 621 dB between the theo- retical insertion loss and the actual one because of the process and measurement, but the experi- ment and theory characteristic curves have good consistency in terms of the shape and change trend of the frequency characteristic curve, etc. And the side lobe suppression effect of the actual frequency response curve is better than that of the theoretical curve.