中文摘要：

In order to improve the quality of detector, Inx Ga1-xAs（x=0.82） buffer layer has been introduced in In0.82Ga0.18As/In P heterostructure. Dislocation behavior of the multilayer is analyzed through plane and cross section [110] by transmission electron microscopy（TEM） and high resolution transmission electron microscopy（HRTEM）. The dislocations are effectively suppressed in Inx Ga1-xAs（x=0.82） buffer layer, and the density of dislocations in epilayer is reduced obviously. No lattice mismatch between buffer layer and epilayer results in no misfit dislocation（MD）. The threading dislocations（TDs） are directly related to the multiplication of the MDs in buffer layer.

英文摘要：

In order to improve the quality of detector, InxGa1-xAS （x=0.82） buffer layer has been introduced in In0.82Ga0.18As/InP heterostructure. Dislocation behavior of the multilayer is analyzed through plane and cross section [110] by transmis- sion electron microscopy （TEM） and high resolution transmission electron microscopy （HRTEM）. The dislocations are effectively suppressed in InxGa1-xAs （x=0.82） buffer layer, and the density of dislocations in epilayer is reduced obvi- ously. No lattice mismatch between buffer layer and epilayer results in no misfit dislocation （MD）. The threading dislocations （TDs） are directly related to the multiplication of the MDs in buffer layer.