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Rectifying and photovoltaic properties of ZnCo2O4/Si heterostructure grown by pulsed laser deposition

ISSN号：1674-1056
期刊名称：《中国物理B：英文版》
时间：0
分类：TN713.1[电子电信—电路与系统] TN304.2[电子电信—物理电子学]
作者机构：[1]Key Laboratory of Space Applied Physics and Chemistry (Ministry of Education), School of Science, Northwestern Polytechnical University, Xi' an 710072, China, [2]State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi' an 710072, China
相关基金：Project supported by the National Natural Science Foundation of China （Grant No. 61078057）, the Natural Science Foundation of Shannxi Province, China （Grant No. 2011GM6013）, the Northwestern Polytechnical University Foundation for Fundamental Research, China （Grant Nos. JC20110270 and JC201271）, and the Open Project of Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, China （Grant No. LZUMMM2013001）.

作者：陈钊[1], 温晓莉[2], 牛利伟[1], 段萌萌[1], 张云捷[1], 董祥雷[1], 陈长乐[1]

关键词：脉冲激光沉积法, 异质结构, 光伏特性, 温度范围, 光伏性质, 传输行为, 整流特性, 光电响应, ZnCo204/Si heterostructure, rectifying behavior, photovoltaic properties, pusled laser deposition

中文摘要：

ZnCo2O4/Si heterostructures have been fabricated by a pulsed laser deposition method, and their transport behaviors and photovoltaic properties have been characterized. The ZnCo2O4/Si heterostructures show a good rectifying behavior at five different temperatures ranging from 50 K to 290 K. The measurements of the photovoltaic response reveals that a photovoltage of 33 mV is generated when the heterostructures are illuminated by a 532 nm laser of 250 mW/cm2and mechanically chopped at 2500 Hz. Both the photocurrent and the photovoltage clearly increase with the increase of the laser intensity at room temperature. However, the heterostructures’ photovoltage peak decreases with the increase of the temperature. This work may open new perspectives for ZnCo2O4/Si heterostructure-based devices.

英文摘要：

ZnCo2O4/Si heterostructures have been fabricated by a pulsed laser deposition method, and their transport behaviors and photovoltaic properties have been characterized. The ZnCo2O4/Si heterostructures show a good rectifying behavior at five different temperatures ranging from 50 K to 290 K. The measurements of the photovoltaic response reveals that a photovoltage of 33 mV is generated when the heterostructures are illuminated by a 532 nm laser of 250 mW/cm^2 and mechanically chopped at 2500 Hz. Both the photocurrent and the photovoltage clearly increase with the increase of the laser intensity at room temperature. However, the heterostructures＇ photovoltage peak decreases with the increase of the temperature. This work may open new perspectives for ZnCo2O4/Si heterostructure-based devices.

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