采用脉冲激光沉积法制备了La0.88Te0.12MnO3(LTMO)/Si异质结,该异质结具有光生伏特效应和良好的整流特性.光生电压在394μs的时间内很快增加到最大值然后逐渐减小.在T=80K时,光生电压的最大值大约是13.7mV.随着温度的升高,热涨落致使光生电压最大值总体呈现减小趋势,而且是非线性减小,这主要是由LTMO层发生金属绝缘体转变而导致的LTMO层能带结构的变化引起的.
The photovoltaic effect and the good rectifying behavior are observed in La0.88Te0.12MnO3(LTMO)/Si heterostructure fabricated by a pulsed laser deposition method.The photovoltage increases quickly to a maximum value at about 394 μs and then decreases gradually.The maximum photovoltage is about 13.7 mV at T = 80 K.The maximum photovoltage decreases with temperature increasing,which is attributed to the stronger thermal fluctuation.A nonlinear decrease of the maximum photovoltage in the photovoltages-temperature curve is observed,which is mainly caused by the change in the band structure of the LTMO layer due to the metal-insulator transition.