中文摘要：

少数载流子寿命（简称少子寿命）是半导体晶体硅材料的一项重要参数，它对半导体器件的性能、晶体硅太阳能电池的光电转换效率都有重要的影响。分别介绍了常用的测量晶体硅和晶体硅太阳电池少子寿命的各种方法。包括微波光电导衰减法（MW-PCD），准稳态光电导方法（QSSPC），表面光电压（SPV），IR浓度载流子浓度成像（CDI）。调制自由载流子吸收（MFCA）和光束（电子束）诱导电流（LBIC，EBLC），并指出了各种方法的优点和不足。

英文摘要：

Lifetime of minority cartier is one of the most important parameters for semiconductor material crystalline silicon. It is very important for the performance of semiconductor components and photoelectric conversion efficiency of crystalline silicon solar cells. Common lifetime t methods for minority cartier of crystalline silicon and crystalline silicon solar ceils were introduced, including microwave photoconductivity decay （μ-PCD）, quasi-steady state photo-conductance （QSSPC）, surface photoelectric voltage （SPV）, infrared carrier density imaging （IR-CDI）, modulation free-cartier absorption （MFCA） and laser beam （electron beam）-induced current （LBIC, EBLE） microscopy. Advantages and disadvantages of these methods were investigated too.