拓扑绝缘体是当前凝聚态物理和材料科学研究的热门课题,其独特的电子态结构使其在自旋电子器件和量子计算机等领域拥有巨大的应用潜力.阐述了拓扑绝缘体Bi2 Se3单晶的制备方法、输运性质以及表面调控效应等方面的最近进展;总结了各种化学掺杂方法对Bi2 Se3费米能级的影响,同时展望了今后Bi2 Se3的研究发展方向.
Topological insulators have sparked a wide research interest in condensed matter physics and material research due to their potential application in spintronics and quantum computer. Recent advance in the crystal growth, transport properties, and modification of surface states of topological insulator Bi2 Sea crystals is reviewed. Meanwhile, chemical doping methods widely applied to adjusting the Fermi level of Bi2Sea crystals are summarized, and the development phosphors are pointed out.