欢迎您！东篱公司
退出
-
申报数据库
-
立项数据库
-
成果数据库
-
项目获奖数据库
中文摘要：
利用磁控溅射技术在单晶硅衬底上制备出具有Ge/石墨/Si结构的薄膜样品,然后把其放入快速热退火（RTA）炉中退火。扫描电子显微镜（SEM）测试表明,石墨过渡层的引入缓解了Si、Ge之间的晶格失配和热失配。X射线衍射（XRD）分析表明450℃是Ge薄膜晶化的临界衬底温度,750℃是使Ge薄膜RTA晶化程度明显提高的临界退火温度,30s是最佳退火时间。
英文摘要：
The thin film samples with the structure of germanium/graphite/silicon were prepared on monocrys- talline silicon substrates by magnetron sputtering technique. Then the samples were annealed in a rapid thermal annealing （RTA） furnace. The scanning electron microscope （SEM） observation shows that the introduction of graphite transition layer alleviates the lattice mismatch and the thermal mismatch between silicon and germani um.X-ray diffraction （XRD） measurements indicate that 450 ℃ is the critical substrate crystallization tempera- ture of germanium film, 750℃ is the critical annealing temperature which increases the RTA crystallization de- gree of Ge film obviously, and 30 seconds is the proximately optimal annealing time.
同期刊论文项目
同项目期刊论文
Deoxidization of V2O5 Powder into VO2 Assisted by an Electrochemical Lithium Intercalation Technique
Performance improvement of conjugated polymer and ZnO hybrid solar cells using nickel oxide as anode
期刊信息
位置：