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Photoluminescence probing of interface evolution with annealing in InGa(N)As/GaAs single quantum wel
  • ISSN号：0021-8979
  • 期刊名称：Journal of Applied Physics
  • 时间：2015.10.23
  • 页码：165305-
  • 相关项目：InAs/GaSb超晶格红外探测材料的调制光谱研究
作者： Xiren Chen|F.-X. Zha|Shaoling Guo|S. M. Wang|
同期刊论文项目
InAs/GaSb超晶格红外探测材料的调制光谱研究
期刊论文 13 会议论文 4
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