中文摘要：

高功率脉冲磁控溅射（HiPIMS）技术被提出以来就受到广泛关注，其较高的溅射材料离化率结合适当的电磁控制，可产生高致密度、高结合力和高综合性能的涂层，但其沉积速率低、放电不稳定、溅射材料离化率差异较大．我们设计了一种筒形溅射源，通过对结构的设计优化，利用类空心阴极放电效应，使问题得到解决．然而其靶面切向磁场不均匀，电子逃逸严重，进而造成等离子体密度偏低，且放电不均匀．本文通过对其放电和等离子体分布进行仿真，提出电场阻挡和磁铁补偿两种方案，研究了不同电场控制条件下的放电行为和等离子体分布．结果表明：增加电子阻挡屏极可以生成势阱，从而有效抑制电子从边缘的逸出；优化后的磁铁补偿可以显著提高靶面横向磁场的均匀性及靶面利用率．两种方案同时作用时，HiPIMS放电刻蚀环面积更大、且更加均匀．

英文摘要：

High-power impulse magnetron sputtering （HiPIMS）, a new physical vapor deposition technique which combines the advantages of the high ionization rates of the sputtered materials and control of electromagnetism, has been widely used to deposit high-performance coatings with a large density and high adhesion. However, HiPIMS has some intrinsic disadvantages such as the low deposition rate, unstable discharge, and different ionization rates for different materials thereby hampering wider industrial adoption. We have recently designed an optimized cylindrical source based on the hollow cathode effect to circumvent the aforementioned limitations. However, during the operation of the cylindrical source, the discharge is inhomogeneous and the etching stripes are nonuniform. In order to determine the underlying mechanism and optimize the electromagnetic control, the discharge in the HiPIMS cylindrical source is simulated. The tangential magnetic field distribution on the target surface of the cylindrical sputtering source is inhomogeneous and electron runaway is serious, resulting in a relatively low plasma density. Two solutions are proposed to improve the situations. The first one is electrical improvement by installing an electron blocking plate, and the second one is magnetic improvement by adding compensating magnets. Our simulation results of the first method show that a potential well is produced by the electron blocking plate to suppress electron runaway and the plasma density is improved significantly, especially around the central cross-section of the cylindrical sputtering source. The discharge becomes homogeneous, and the etching stripes are uniform albeit not full enough. The second method of magnetic improvement significantly improves the homogeneity of the tangential magnetic field distribution on the target surface and the target utilization rate. After adding the optimized compensating magnets, the shape of the effective area （the value of the tangential magnetic field in a range of 25-50 mT） on