针对现有硅太阳能电池工程数学模型精度不高的缺点,基于硅太阳能电池的理论数学模型,提出一种改进的硅太阳能电池非线性工程简化数学模型.忽略一些次要因素的影响,仅仅利用硅太阳能电池生产厂商提供的、标准测试条件下的4个电气参数,即短路电流Isc-ref、开路电压Uoc-ref、最大功率点电流Im-ref和最大功率点电压Um-ref.更重要的是,该模型首次考虑在任意光强和温度下的串联电阻参数的影响,以提高精度.进行了太阳能电池输出电气特性试验,并与基于简化模型的仿真对比.结果表明,该模型的误差一般都在6%以内,满足工程应用的精度要求.
To overcome the low precision problem of the existing engineering mathematical model for silicon solar cell, an improved non-linear engineering simplified mathematical model for silicon solar cell was proposed based on the theoretical model. The influences of some subordination factors were neglected, and only four electrical parameters (i. e. the short-circuit current Ise-ref, the open-circuit voltage Uoc-ref, the current of maximum power point Im-ref and the voltage of maximum power point Um-ref) under standard test conditions were used. These parameters were provided by manufacturers. More importantly, the influences of series resistance in arbitrary solar radiation and cell temperature were firstly taken into account to improve the accuracy. Experiments of output characteristic for solar cell were compared with the simulation by the simplification model. The results show that the model error is under 6 percent, and its accuracy is acceptable for most practical engineering cases.