采用恒电位电沉积方法,在未经修饰的ITO导电玻璃基底上通过控制实验条件制备出不同形貌的纳米ZnO结构,而在经过ZnO纳米粒子膜修饰后的ITO导电玻璃基底上,制备出透明、高取向、粒径小于30nm的ZnO纳米棒阵列.用扫描电子显微镜(SEM)、X射线衍射(xRD)以及透射光谱对制备出的ZnO纳米棒阵列的结构、形貌和透明性进行了表征.测试结果表明,ZnO纳米棒阵列的平均直径为21nm,粒径分布窄,约18-25nm,择优生长取向为[001]方向,垂直于基底生长.当入射光波长大于400nm时,ZnO纳米棒阵列的透光率大于95%.
ZnO nanocrystallines with different morphologies have been prepared on unmodified ITO substrate by using a potentiostatic electrodeposition method. After the ITO substrate was pre-modified with ZnO nanoparticles, a transparent and highly oriented ZnO nanorod array with a diameter less than 30 nm has been successfully prepared by the electrochemical deposition. The obtained ZnO nanostructure was characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD) and transmission spectroscopy. The resuits indicate that the average diameter of ZnO nanorod is about 21 nm, and the size distribution is about 18-25 nm. The nanorods, growing along [001] direction, are perpendicularly oriented to the substrate. When the wavelength of incident light is over 400 nm, the ZnO nanorod array films show high optical transmission of above 95%.