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中文摘要：
选用不同浓度的Pb（zr0.52Ti0.48）O^3溶胶，用Sol-gel法在Pt／Ti／SiO2／Si基片上沉积一层厚度不同的Pb（Zr0.52Ti0.48）O^3（PZT52）过渡层，经400℃烘烤、550℃退火等程序后，再用Sol-gel法在PZT52过渡层上沉积Pb（Zr0.52Ti0.48）O^3薄膜．XRD分析表明，有PZT52过渡层的Pb（Zr0.52Ti0.48）O^3薄膜具有（111）择优取向的钙钛矿结构，且随着过渡层厚度的增加，Pb（Zr0.52Ti0.48）O^3薄膜的（111）择优取向程度越高．SEM分析表明，当PZT52过渡层的厚度达到14nm以上，Pb（Zr0.52Ti0.48）O^3薄膜结晶程度得到明显改善，平均晶粒尺寸大大增加．介电、铁电性能测试表明，与没有过渡层的Pb（Zr0.52Ti0.48）O^3薄膜相比，有PZT52过渡层的Pb（Zr052Ti0.48）O^3薄膜具有较大的介电常数和剩余极化强度，而介电损耗则较小．
英文摘要：
Highly （111 ）-oriented Pb（Zr0.52Ti0.48 ）O^3 （PZT） films with a variety of PZT buffer layer thickness were prepared by spin coating on Pt/Ti/SiO2/Si substrates with Sol-Gel process. The thickness of PZT buffer layer was found to play a significant role on grain size and orientation of Pb（Zr0.52Ti0.48 ）O^3 films. With the increasing of PZT buffer layer thickness, both crystallization and orientation were improved obviously. High dielectric constant （1278, 1kHz, for 28nm buffer）, low dielectric loss （0.023, 1kHz, for 28nm buffer）, symmetric C-V characteristics and P-E curves were obtained. Hysteresis measurements show that the remnant polarization and coercive field of the films reach 43μC· cm^- 2 and 78kV· cm^-1 , respectively.
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