中文摘要：

Bi1-xTbxFeO3 thin films were prepared on SnO2（fluorine doped tin oxide） substrates by a sol—gel method.The structural and electrical properties of the BiFeO3 thin films were characterized and tested.The results indicated that the diffraction peak of the Tb-doped BiFeO3 films was shifted towards right as the doping amounts were increased.The structure was transformed from the rhombohedral to tetragonal/orthorhombic phase.The Bi0.89Tb0.11FeO3 thin film showed the well-developed P—E loops,which enhanced remnant polarization（Pr = 88.05 μC/cm2） at room temperature.The dielectric constant and dielectric loss of Bi0.89Tb0.11FeO3 thin film at 100 kHz were 185 and 0.018,respectively.Furthermore,the Bi0.89Tb0.11FeO3 thin film showed a relatively low leakage current density of 2.07 × 10-5 A/cm2 at an applied electric field of 150 kV/cm.The Xray photoelectron spectroscopy（XPS） spectra indicated that the presence of Fe2+ ions in the Bi0.89Tb0.11FeO3thin film was less than that in the pure BiFeO3.

英文摘要：

Bil_xTbxFe03 thin films were prepared on Sn02 （fluorine doped tin oxide） substrates by a sol-gel method. The structural and electrical properties of the BiFe03 thin films were characterized and tested. The results indicated that the diffraction peak of the Tb-doped BiFe03 films was shifted towards right as the doping amounts were increased. The structure was transformed from the rhombohedral to tetragonal/orthorhombic phase. The Bio.sgTbo.11Fe03 thin film showed the well-developed P-E loops, which enhanced remnant polarization （Pr = 88.05 μC/cm2） at room temperature. The dielectric constant and dielectric loss of Bio.sgTbo.llFe03 thin film at 100 kHz were 185 and 0.018, respectively. Furthermore, the Bio.seTbo.llFe03 thin film showed a relatively low leakage current density of 2.07×10-5 A/cm2 at an applied electric field of 150 kV/cm. The X- ray photoelectron spectroscopy （XPS） spectra indicated that the presence of Fe2＋ ions in the Bio.egTbo.11Fe03 thin film was less than that in the pure BiFe03.