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中文摘要：
AlN是一种性能优异的宽带隙Ⅲ-Ⅴ族氮化物半导体材料，在电、光和机械领域展现了极大的应用前景。结合国内外研究的热点问题和各科研团体最新的研究成果，从AlN的性质、AlN薄膜的制备方法、国内外AlN薄膜的最新研究进展及AlN薄膜的应用等4个方向进行了详细阐述。
英文摘要：
AlN is a group-Ⅲ-Ⅴ-nitride semiconductor materials with excellent properties and wide band-gap, it shows great application prospect especially in the electrical, optical and mechanical fields. In this article, with the hot issue researched at home and abroad, and the latest results which are discussed by the research groups, the AlN nature, AlN thin film preparation, the latest research progress at home and abroad and the application of AlN thin films are explained in detail.
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