中文摘要：

用B样条技术计算H2＋杂质半导体量子点基态能级的量子尺寸效应．计算结果显示：当量子点半径R较小时，基态能级E对两核距离D的变化很敏感，E—D曲线上升快；当R较大时，E—D曲线上升变缓，基态能级对D的变化敏感度下降．在R较小的区域，E—R曲线下降较快，量子尺寸效应显著．在R较大的区域，E—R曲线下降速度变缓，量子尺寸效应减弱．

英文摘要：

Quantum size effects on H2 ＋ impurites semiconductor quantum dot ground energies with Bspline technology have been found. The calculated results show. When quantum dot radia R is small, the quantum dot energy curves E--D rise quickly, and the ground energies are sensitive to distence of the two nucleus D; While R becomes larger, the quantum dot energy curves E--D rise slowly, and the ground energies are not sensitive to D clearly. On the other hand,R is in small region, the quantum dot energy curves E--R decrease quickly with quantum dot radia R increasing, the quantum size effects are clear, while quantum dot radia R becomes larger, the quantum dot energy curves E--R decrease slowly, and the quantum size effects are not clear.