中文摘要：

采用低氟的金属有机盐沉积技术（MOD）在LAO单晶上制备了Gd和Zr掺杂的YBCO薄膜,并分析了不同掺杂对YBCO薄膜在外加磁场下的Jc的影响.研究发现,采用Gd部分取代YBCO薄膜中的Y元素,可以有效地提高YBCO薄膜高场下的Jc值,但对于低场下的Jc值影响不大;而采用过量Gd掺杂YBCO薄膜,可以有效地提高YBCO薄膜在低场下的Jc值,但对于高场下的Jc值影响不大.而Zr掺杂可以有效地提高YBCO薄膜在低场和高场下的Jc值.最后,结合Gd取代和Zr掺杂两种方式,有效地提高了YBCO薄膜的场性能,其最大钉扎力（Fp（Max））达到了16GN/m3,比纯的YBCO薄膜（4.0 GN/m3）提高了约3倍;在磁场为3T和7T下,其Jc值分别为1.31MA/cm2和87.7kA/cm2.

英文摘要：

YBCO films doped with Zr or substituted by Gd element were prepared by fluorine-reduced metal organic deposition（MOD） on LAO single crystal.The influences of different dopants on in-field critical current density（Jc） of YBCO films were investigated.It is found that the Jc values of YBCO films in high field were enhanced drastically through substituting Y site by Gd element partially,while the Jc values of YBCO films in low field are not enhanced.The Jc values of YBCO films in low field are improved significantly by adding extra Gd element into YBCO film be-cause of the formation of rare earth oxide particles in YBCO film.But in high field,it has slight effect on Jc values.It is an effective method to improve the property of YBCO film by adding Zr-contained compounds into YBCO film to form BZO nano particles,which can enhance Jc values of YBCO film in low field and in high field.Finally,the high performance Y0.5Gd0.5BCO film incorporated with BZO nano particles was prepared.The max pinning force（Fp（max）） is up to 16GN/cm3,as higher as 4 times of that of pure YBCO film.Jc values of Y0.5Gd0.5BCO＋Zr film at 65K reach 1.31MA/cm2（3T） and 87.7kA/cm2（7T）.