中文摘要：

采用脉冲激光沉积技术在（0001）取向的蓝宝石基片上外延生长了Pt单晶薄膜，研究了沉积温度和激光能量对Pt薄膜的晶体结构，表面形貌及电学性能的影响规律。X射线衍射（XRD）分析结果表明，在沉积温度650℃、激光脉冲频率1Hz和激光能量280mJ的条件下，制备得到的Pt（111）单晶薄膜，其（111）面叫摇摆曲线半高宽（FWHM）仅为0．068°。原子力显微镜（AFM）分析表明外延的Pt薄膜表面具有原子级平整度，其表面均方根粗糙度（RMS）约为1．776nm。四探针电阻测试结果显示薄膜方阻为1．962Ω／口，满足铁电薄膜的制备工艺对Pt底电极的要求。

英文摘要：

Epitaxial Pt films have been grown on （0001）-oriented sapphire substrate by pulsed laser deposition. The effects of temperature and laser energy on microstructure, surface morphology and electric properties were studied. X-ray diffraction studies show that single （lll）-oriented Pt films on sapphire substrate were obtained and the optimum conditions were found to be as follows：growth temperature 650℃ ,pulse laser energy intensity 280mJ/pulse and deposition rate 1Hz. The full width at half maximum （FWHM） of （111） rocking curve is 0.068°of Pt film,indicating that the film is of a good quality. According to the atomic force microscopy （AFM）, the surface of Pt film is atomically smooth and the root mean square roughness values （RMS） is 1. 776nm. The results of four-probe measurement reveal that square resistance of Pt films is 1. 962Ω/口. The as-deposited films could be used as bottom electrode for ferroelectric films.