利用有机/无机杂化方法制备了光敏性溶胶-凝胶(sol-gel)SiO2材料,在预生长了18μm厚的SiO2上包层的硅基片上旋涂成膜。经前烘、紫外曝光、后烘的薄膜在5μm×5μm的扫描范围内的表面粗糙度只有0.266nm,表面起伏度只有0.336nm。利用紫外光直写技术,制作出条形波导器件。SEM照片表明波导端面形状较好,侧壁陡直。对1×4多模干涉型分束器进行初步的通光测试,观察到分光效果较好的近场输出图像。
Photosensitive sol-gel SiO2 materials were synthesized by organic-inorganic hybrid method, and were spun on silicon substrate. After the process of prebaking, UV-light exposure and postbaking, the surface of as-deposited fill was very smooth, with roughness just 0.266nm and undulation just 0.336nm in a 5μm×5μm scanning square. The strip optical waveguides and 1×4 MMI splitter were fabricated by the means of UV-light imprinting technology, with good-shape section and steep sidewalls. Good mode profile for the splitter was measured.