中文摘要：

针对先进纳米Cu互连技术的要求,比较了直流和脉冲两种电镀条件下Cu互连线的性能以及电阻率、织构系数、晶粒大小和表面粗糙度的变化。实验结果表明,在相同电流密度条件下,脉冲电镀所得Cu镀层电阻率较低,表面粗糙度较小,表面晶粒尺寸和晶粒密度较大,而直流电镀所得镀层（111）晶面的择优程度优于脉冲。在超大规模集成电路Cu互连技术中,脉冲电镀将有良好的研究应用前景。

英文摘要：

Aiming at the technology demand of advanced copper interconnect, the properties of electrodeposited copper film and parameters such as resistivity, texture coefficient, grain size and surface roughness were investigated by DC plating and pulse plating respectively. The results show that at the same current density conditions, the Cu film deposited by pulse plating has lower resistivity, lower surface roughness, larger grain size and grain density, but the Cu film deposited by DC plating has better （111） preferential orientation than by pulse plating. In copper interconnect technology of ULSI, pulse plating may have a good potential prospect application.