位置：成果数据库 > 期刊 > 期刊详情页
Electrically driven ultraviolet random lasing from an n-MgZnO/i-ZnO/SiO2/p-Si asymmetric double hete
  • ISSN号：2040-3364
  • 期刊名称：Nanoscale
  • 时间：2013
  • 页码：5080-5085
  • 相关项目：p型ZnNiO材料的MOCVD法制备、调制与掺杂问题研究
作者： Shi, Zhi-Feng|Zhang, Yuan-Tao|Xia, Xiao-Chuan|Zhao, Wang|Wang, Hui|Zhao, Long|Dong, Xin|Zhang, Bao-Lin|Du, Guo-Tong|
同期刊论文项目
p型ZnNiO材料的MOCVD法制备、调制与掺杂问题研究
期刊论文 22 会议论文 5
同项目期刊论文
金属有机化学气相沉积法制备ZnO和ZnO:Ni薄膜及其特性分析
Study on the luminescence properties of n-ZnO/i-NiO/n-GaN isotype heterojunction diodes
Au层退火温度对ZnO/Au/ZnO多层膜的结构、光学及电学性质的影响
Vertical conducting ultraviolet light-emitting diodes based on p-ZnO:As/n-GaN/n-SiC heterostructure
p-Type NiZnO thin films grown by photo-assist metal–organic chemical vapor deposition
MOCVD法制备的p-ZnO/n-SiC异质结器件及其电致发光性能
Dominant ultraviolet electroluminescence from p-ZnO:As/n-SiC(6H) heterojunction light-emitting diode
MOCVD Preparation and Properties of ZnO and Ni-doped ZnO Films
利用MOCVD技术生长As掺杂的p-ZnMgO薄膜
MOCVD法生长Ga、P掺杂的ZnO薄膜
Significant improvement of ZnS film electrical and optical performance by indium incorporation