中文摘要：

采用化学溶液沉积法在Al2O3衬底上生长了MgxNi（1-x）Mn2O4（MNM,x=0,0.05,0.10,0.15,0.20）薄膜.通过X射线衍射仪和场发射扫描电子显微镜研究了Mg掺杂浓度对MNM薄膜的结构特性的影响,MNM薄膜均匀致密,具有良好的结晶性,为单一立方尖晶石结构.变温电流-电压特性研究显示,MNM薄膜的电输运特性符合小极化子变程跳跃电导模型,同时获得了不同Mg掺杂浓度的MNM薄膜的电阻率ρ、特征温度T0和电阻温度系数α.研究结果表明,Mg的掺杂对MNM薄膜的结构和电学特性都有一定的影响.

英文摘要：

The MgxNi1-xMn2O4 （MNM x=O, 0.05, 0.10, 0.15, 0.20） films were grown on Al2O3 substrate by chemical solution deposition method. The effect of Mg doping on the structural properties of MNM thin films was studied by x-ray diffractomer and field emission scanning electron microscopy. The results show that the MNM films have a single cubic spinel structure and the films are smooth and uniform, which have good crystallinity. The electrical measurements show that the conduction of MNM thin films can be described by a variable range hopping model. The values of resistivity, characteristic temperature To, temperature coefficient of resistance oL for MNM thin films were obtained. The Mg concentration dependence of structural and electrical properties for MNM films was investigated.