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Growth and interfacial properties of atomic layer deposited Al0.7Ti0.3Oy high-k dielectric on Ge sub
  • ISSN号：0947-8396
  • 期刊名称：Applied Physics A-Materials Science & Processi
  • 时间：2014.11
  • 页码：1479-1484
  • 相关项目：高K栅介质/III-V族半导体界面的原位调控及性能研究
作者： Lu, Hong-Liang|Xie, Zhang-Yi|Geng, Yang|Zhang, Yuan|Sun, Qing-Qing|Wang, Peng-Fei|Ding, Shi-Jin|Zhang, David Wei|
同期刊论文项目
高K栅介质/III-V族半导体界面的原位调控及性能研究
期刊论文 18 专利 3
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